* n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelet Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Cur
IRFM260
International Rectifier
442.38 KB
Transistor n-channel.
Previous Datasheet
Index
Next Data Sheet
Provisional Data Sheet No. PD-9.1388A
REPETITIVE AVALANCHE AND dv/dt RATED
IRFM260
N-CHANNEL
HEXFET
®
.
📁 Related Datasheet
IRFM210A Advanced Power MOSFET (Fairchild Semiconductor)
IRFM210B 200V N-Channel MOSFET (Fairchild Semiconductor)
IRFM214B 250V N-Channel MOSFET (Fairchild Semiconductor)
IRFM220A Advanced Power MOSFET (Fairchild Semiconductor)
IRFM220B 200V N-Channel MOSFET (Fairchild Semiconductor)
IRFM224B 250V N-Channel MOSFET (Fairchild Semiconductor)
IRFM240 N-CHANNEL POWER MOSFET (Seme LAB)
IRFM240 POWER MOSFET THRU-HOLE (TO-254AA) (International Rectifier)
IRFM250 POWER MOSFET (International Rectifier)
IRFM250 N-CHANNEL POWER MOSFET (Seme LAB)
