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IRFM260 TRANSISTOR N-CHANNEL

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Description

Previous Datasheet Index Next Data Sheet Provisional Data Sheet No.PD-9.1388A REPETITIVE AVALANCHE AND dv/dt RATED IRFM260 N-CHANNEL HEXFET ® .

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Datasheet Specifications

Part number
IRFM260
Manufacturer
International Rectifier
File Size
442.38 KB
Datasheet
IRFM260_InternationalRectifier.pdf
Description
TRANSISTOR N-CHANNEL

Features

* n n n n n Hermetically Sealed Electrically Isolated Simple Drive Requirements Ease of Paralleling Ceramic Eyelet Absolute Maximum Ratings Parameter ID @ VGS = 10V, TC = 25°C I D @ VGS = 10V, TC = 100°C IDM PD @ TC = 25°C VGS EAS I AR EAR dv/dt TJ TSTG Continuous Drain Current Continuous Drain Cur

Applications

* such as switching power supplies, motor controls, inverters, choppers, audio amplifiers and high-energy pulse circuits, and virtually any application where high reliability is required. HEXFET transistor’s totally isolated package eliminates the need for additional isolating material between the dev

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