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MBR30H100CT Datasheet - Taiwan Semiconductor

Dual Common Cathode Schottky Rectifier

MBR30H100CT Features

* - Low power loss, high efficiency - Guardring for overvoltage protection - High surge current capability - Compliant to RoHS Directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition MECHANICAL DATA Case: TO-220AB Molding compound, UL flammabili

MBR30H100CT General Description

Green compound AVERAGE FORWARD A CURRENT (A) FIG.1 FORWARD CURRENT DERATING CURVE 35 30 25 20 15 10 RESISTIVE OR INDUCTIVELOAD 5 WITH HEATSINK 0 0 25 50 75 100 125 150 175 LEAD TEMPERATURE (oC) PEAK FORWARD SURGE CURRENT (A) 150 125 100 75 50 25 0 1 FIG. 2 MAXIMUM FORWARD SURGE CURRENT PER LEG .

MBR30H100CT Datasheet (193.19 KB)

Preview of MBR30H100CT PDF

Datasheet Details

Part number:

MBR30H100CT

Manufacturer:

Taiwan Semiconductor

File Size:

193.19 KB

Description:

Dual common cathode schottky rectifier.

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MBR30H100CT Dual Common Cathode Schottky Rectifier Taiwan Semiconductor

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