TSF30H120C Trench Schottky Rectifier

Taiwan Semiconductor

Description

TSF30H120C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

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Datasheet Specifications

Part number: TSF30H120C
Manufacturer: Taiwan Semiconductor
File Size: 231.90 KB
Datasheet: TSF30H120C-TaiwanSemiconductor.pdf
Description: Trench Schottky Rectifier

Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21

TSF30H120C Distributors

📁 Related Datasheet

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TSF30H120C Trench Schottky Rectifier Taiwan Semiconductor

Taiwan Semiconductor TSF30H120C-like datasheet