TSF30H120C Datasheet (Taiwan Semiconductor)

TSF30H120C, Trench Schottky Rectifier

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) FIG.

2 TYPICAL FORWARD CHARACTERISTICS 100 30 25 20 15 10 5 0 0 25 50 75 100 (oC) 10 Tj=150oC 1 Tj=125oC Tj=100oC WITH

TSF30H120C Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21