TSF30H120C

Trench Schottky Rectifier

Taiwan Semiconductor

TSF30H120C Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21

TSF30H120C General Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 30 25 20 15 10 5 0 0 25 50 75 100 (oC) 10 Tj=150oC 1 Tj=125oC Tj=100oC WITH .

TSF30H120C Datasheet (231.90 KB)

TSF30H120C Datasheet Preview — Preview of TSF30H120C PDF

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Part number:

TSF30H120C

Manufacturer:

Taiwan Semiconductor

File Size:

231.90 KB

Description:

Trench schottky rectifier.

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TSF30H120C Trench Schottky Rectifier Taiwan Semiconductor

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TSF30H120C Features

TSF30H120C General Description

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