TSF30H120C - Trench Schottky Rectifier

Taiwan Semiconductor

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Datasheet Details

Part number	TSF30H120C
Manufacturer	Taiwan Semiconductor
File Size	231.90 KB
Description	Trench Schottky Rectifier
Datasheet	TSF30H120C-TaiwanSemiconductor.pdf

TSF30H120C Product details

Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 40 35 AVERAGE FORWARD CURRENT (A) INSTANTANEOUS FORWARD CURRENT (A) FIG.2 TYPICAL FORWARD CHARACTERISTICS 100 30 25 20 15 10 5 0 0 25 50 75 100 (oC) 10 Tj=150oC 1 Tj=125oC Tj=100oC WITH HEATSINK 4in x 6in x 0.25in Al-Plate 125 150 0.1 Tj=25oC 0.01 0 0.2 0.4 0.6 0.8 1 1.2 FORWARD VOLTAGE (V) CASE TEMPERATURE FIG.3 TYPICAL REVERSE CHARACTERISTICS 10 INSTANTANEOUS REVERSE CURRENT (

Features

- Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition ITO-220AB.

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Published: Jul 10, 2014 |