TSF30U45C

Trench Schottky Rectifier

Taiwan Semiconductor

TSF30U45C Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21

TSF30U45C General Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 20 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 AVERAGE FORWARD CURRENT (A) TJ=150oC 10 15 TJ=125oC 10 1 TJ=25oC 0.1 5 WITH HEATSINK 4in x 6in x 0.25in .

TSF30U45C Datasheet (211.13 KB)

TSF30U45C Datasheet Preview — Preview of TSF30U45C PDF

Datasheet Details

Part number:

TSF30U45C

Manufacturer:

Taiwan Semiconductor

File Size:

211.13 KB

Description:

Trench schottky rectifier.

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TSF30U45C Trench Schottky Rectifier Taiwan Semiconductor

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TSF30U45C Features

TSF30U45C General Description

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