TSF30U45C Datasheet (Taiwan Semiconductor)

TSF30U45C, Trench Schottky Rectifier

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 20 INSTANTANEOUS FORWARD CURRENT (A) FIG.

2 TYPICAL FORWARD CHARACTERISTICS 100 AVERAGE FORWARD CURRENT (A) TJ=150oC 10 15 TJ=125oC 10 1 TJ=25oC 0.1 5 WITH HEATSINK 4in x 6in x 0.25in

TSF30U45C Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21