Datasheet4U Logo Datasheet4U.com

TSF10H100C Datasheet - Taiwan Semiconductor

TSF10H100C, Trench Schottky Rectifier

creat by ART TSF10H100C Taiwan Semiconductor .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.
 datasheet Preview Page 1 from Datasheet4u.com

TSF10H100C-TaiwanSemiconductor.pdf

Preview of TSF10H100C PDF

Datasheet Details

Part number:

TSF10H100C

Manufacturer:

Taiwan Semiconductor

File Size:

238.30 KB

Description:

Trench Schottky Rectifier

Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to W

TSF10H100C Distributors

📁 Related Datasheet

📌 All Tags

Taiwan Semiconductor TSF10H100C-like datasheet