TSF10H100C - Trench Schottky Rectifier

Taiwan Semiconductor

TSF10H100C Description

creat by ART TSF10H100C Taiwan Semiconductor .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

TSF10H100C Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to W

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Datasheet Details

Part number: TSF10H100C
Manufacturer: Taiwan Semiconductor
File Size: 238.30 KB
Datasheet: TSF10H100C-TaiwanSemiconductor.pdf
Description: Trench Schottky Rectifier

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Trench Schottky Rectifier Taiwan Semiconductor

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