TSF2080C

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Taiwan Semiconductor

TSF2080C Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21

TSF2080C General Description

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 (oC) INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TJ=150oC AVERAGE FORWARD CURRENT (A) 10 TJ=125oC TJ=25oC 1 TJ=100oC 0.1 .

TSF2080C Datasheet (186.07 KB)

TSF2080C Datasheet Preview — Preview of TSF2080C PDF

Datasheet Details

Part number:

TSF2080C

Manufacturer:

Taiwan Semiconductor

File Size:

186.07 KB

Description:

Dual high-voltage trench mos barrier schottky rectifier.

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TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

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TSF2080C Features

TSF2080C General Description

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