TSF2080C Datasheet - Taiwan Semiconductor

TSF2080C, Dual High-Voltage Trench MOS Barrier Schottky Rectifier

creat by ART TSF2080C Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

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TSF2080C-TaiwanSemiconductor.pdf

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Datasheet Details

Part number:

TSF2080C

Manufacturer:

Taiwan Semiconductor

File Size:

186.07 KB

Description:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21

TSF2080C Distributors

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TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

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