TSF20N60MR Datasheet, Mosfet, Truesemi

TSF20N60MR Features

• Mosfet
• 20A,600V,RDS(on)=0.36 Ω @ VGS =10V
• Low gate charge(typical 57nC)
• High ruggedness
• Fast switching
• 100% avalanche tested
• Improve

PDF File Details

Part number:

TSF20N60MR

Manufacturer:

Truesemi

File Size:

398.32kb

Download:

📄 Datasheet

Description:

N-channel mosfet. This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially t

TAGS

TSF20N60MR

Truesemi

📁 Related Datasheet

TSF20N60S - N-Channel MOSFET (Truesemi)
TSP20N60S/TSF20N60S/TSB20N60S 600V N-Channel MOSFET TSP20N60S,TSF20N60S, TSB20N60S 600V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET .

TSF20N65S - N-Channel MOSFET (Truesemi)
TSP20N65S/TSF20N65S/TSB20N65S 650V N-Channel MOSFET TSP20N65S,TSF20N65S, TSB20N65S 650V N-Channel MOSFET September, 2013 SJ-FET Description SJ-FET .

TSF20N50M - N-Channel MOSFET (Truesemi)
TSF20N50M TSF20N50M 500V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology..

TSF204D00-S1 - Saw Filters (Token)
 Product Introduction Token Saw Filters (TSF) Make New Waves in The Wireless World. With the growth of wireless munications, surface acoustic wave.

TSF2080C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
creat by ART TSF2080C Taiwan Semiconductor Dual High-Voltage Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky t.

TSF20H100C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Ex.

TSF20H120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
creat by ART TSF20H120C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schott.

TSF20H120C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Ex.

TSF20H150C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H100C thru TSF20H150C Taiwan Semiconductor Trench MOS Barrier Schottky Rectifier FEATURES - Patented Trench MOS Barrier Schottky technology - Ex.

TSF20L100C - Schottky Barrier Rectifier (INCHANGE)
Schottky Barrier Rectifier FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High Surge Capacity ·Minimum Lot-to-Lot variations for robu.