TSF20N50M Datasheet - Truesemi

TSF20N50M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF20N50M Features

* 20A,500V,Max.RDS(on)=0.26Ω @ VGS =10V

* Low gate charge(typical 45nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS PD TJ

TSF20N50M Datasheet (526.90 KB)

TSF20N50M Datasheet Preview — Preview of TSF20N50M PDF

Datasheet Details

Part number:

TSF20N50M

Manufacturer:

Truesemi

File Size:

526.90 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF20N60MR N-Channel MOSFET (Truesemi)

TSF20N60S N-Channel MOSFET (Truesemi)

TSF20N65S N-Channel MOSFET (Truesemi)

TSF204D00-S1 Saw Filters (Token)

TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H100C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H120C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H150C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20L100C Schottky Barrier Rectifier (INCHANGE)

TAGS

TSF20N50M N-Channel MOSFET Truesemi

Image Gallery

TSF20N50M Distributor