TSF204D00-S1
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TSF2080C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier
(Taiwan Semiconductor)
creat by ART
TSF2080C
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Dual High-Voltage Trench MOS Barrier Schottky Rectifier
FEATURES
- Patented Trench MOS Barrier Schottky t.
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TSF20H100C thru TSF20H150C
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TSF20L100C - Schottky Barrier Rectifier
(INCHANGE)
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FEATURES ·Low Forward Voltage ·Low Power Loss/High Efficiency ·High Surge Capacity ·Minimum Lot-to-Lot variations for robu.
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(Taiwan Semiconductor)
TSF20L100C thru TSF20L200C
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TSF20N50M - N-Channel MOSFET
(Truesemi)
TSF20N50M
TSF20N50M
500V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology..