Part number:
TSF20H120C
Manufacturer:
Taiwan Semiconductor
File Size:
202.14 KB
Description:
Dual high-voltage trench mos barrier schottky rectifier.
* Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to W
TSF20H120C Datasheet (202.14 KB)
TSF20H120C
Taiwan Semiconductor
202.14 KB
Dual high-voltage trench mos barrier schottky rectifier.
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