TSF20H120C Datasheet - Taiwan Semiconductor

TSF20H120C, Dual High-Voltage Trench MOS Barrier Schottky Rectifier

creat by ART TSF20H120C Taiwan Semiconductor .
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.

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Datasheet Details

Part number:

TSF20H120C

Manufacturer:

Taiwan Semiconductor

File Size:

202.14 KB

Description:

Dual High-Voltage Trench MOS Barrier Schottky Rectifier

Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to W

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TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier Taiwan Semiconductor

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