TSF20H120C Datasheet - Taiwan Semiconductor

TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.1 FORWARD CURRENT DERATING CURVE 30 25 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TA=150oC AVERAGE FORWARD CURRENT (A) 10 TA=125oC 1 TA=100oC 0.1 TA=25oC .

TSF20H120C Features

* Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to W

TSF20H120C_TaiwanSemiconductor.pdf