TSF20L200C

Trench Schottky Rectifier

Taiwan Semiconductor

TSF20L200C Features

* - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYP

TSF20L200C General Description

Green compound RATINGS AND CHARACTERISTICS CURVES (TA = 25°C unless otherwise noted) AVERAGE FORWARD CURRENT (A) FIG. 1 FORWARD CURRENT DERATING CURVE 25 20 15 10 WITH HEATSINK 5 3in x 5in x 0.25in Al-Plate 0 0 25 50 75 100 125 150 CASE TEMPERATURE (oC) INSTANTANEOUS FORWARD CURRENT .

TSF20L200C Datasheet (242.63 KB)

TSF20L200C Datasheet Preview — Preview of TSF20L200C PDF

Datasheet Details

Part number:

TSF20L200C

Manufacturer:

Taiwan Semiconductor

File Size:

242.63 KB

Description:

Trench schottky rectifier.

📁 Related Datasheet

TSF20L100C Schottky Barrier Rectifier (INCHANGE)

TSF20L120C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF20L150C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF204D00-S1 Saw Filters (Token)

TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H100C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H120C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H150C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20N50M N-Channel MOSFET (Truesemi)

TAGS

TSF20L200C Trench Schottky Rectifier Taiwan Semiconductor

Image Gallery

TSF20L200C Features

TSF20L200C General Description

Datasheet Details

File Size:

Description:

TSF20L200C Distributor