TSF20H150C Datasheet - Taiwan Semiconductor

TSF20H150C Trench MOS Barrier Schottky Rectifier

RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG. 1 FORWARD CURRENT DERATING CURVE 30 25 TSF20H100C 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG. 2 TYPICAL FORWARD CHARACTERISTICS 100 TSF20H100C AVERAGE FORWARD CURRENT (A) 10 Tj=150oC 1 Tj=125.

TSF20H150C Features

* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220A

TSF20H150C_TaiwanSemiconductor.pdf