TSF20H150C - Trench MOS Barrier Schottky Rectifier
RATINGS AND CHARACTERISTICS CURVES (TA=25oC unless otherwise noted) FIG.
1 FORWARD CURRENT DERATING CURVE 30 25 TSF20H100C 20 15 10 5 0 0 25 50 75 100 125 150 INSTANTANEOUS FORWARD CURRENT (A) FIG.
2 TYPICAL FORWARD CHARACTERISTICS 100 TSF20H100C AVERAGE FORWARD CURRENT (A) 10 Tj=150oC 1 Tj=125
TSF20H150C Features
* - Patented Trench MOS Barrier Schottky technology - Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC ITO-220AB MECHANICAL DATA Case : ITO-220A
