TSF22N50M - N-Channel MOSFET

Name: TSF22N50M
SKU: TSF22N50M-1108562

Truesemi

Datasheet Details

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

22A,500V,Max. RDS(on)=0.26Ω @ VGS =10V.
Low gate charge(typical 45nC).
High ruggedness.
Fast switching.
100% avalanche tested.
Improved dv/dt capability Absolute Maximum Ratings TJ=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS PD TJ, TSTG Parameter Drain-Source Voltage Gate-Source Voltage Drain Current Pulsed Drain Current TC = 25℃ TC = 100℃ Single Pulsed Avalanche Energy (L=0.4mH) Power Dissipation (TC = 25℃) Operating a.

📁 TSF22N50M Similar Datasheet

TSF22 - (TSF21 - TSF26) 2.0A Super Fast Recovery Rectifier (TAITRON)
TSF204D00-S1 - Saw Filters (Token)
TSF2080C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H100C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H120C - Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20H150C - Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)
TSF20L100C - Schottky Barrier Rectifier (INCHANGE)
TSF20L120C - Trench Schottky Rectifier (Taiwan Semiconductor)

Other Datasheets by Truesemi

Published: Apr 12, 2017 |