Datasheet4U Logo Datasheet4U.com

TSF2N60MZ

N-Channel MOSFET

TSF2N60MZ Features

* 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V

* Low gate charge ( typical 9nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* ESD improved capability

* Improved dv/dt capability GDS TO-220 GD S TO-220F Absolute Maximum Ratings TC

TSF2N60MZ General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF2N60MZ Datasheet (345.91 KB)

Preview of TSF2N60MZ PDF

Datasheet Details

Part number:

TSF2N60MZ

Manufacturer:

Truesemi

File Size:

345.91 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF2N60M 600V N-Channel MOSFET (Truesemi)

TSF2N70M N-Channel MOSFET (Truesemi)

TSF204D00-S1 Saw Filters (Token)

TSF2080C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H100C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H120C Dual High-Voltage Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H120C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20H150C Trench MOS Barrier Schottky Rectifier (Taiwan Semiconductor)

TSF20L100C Schottky Barrier Rectifier (INCHANGE)

TSF20L120C Trench Schottky Rectifier (Taiwan Semiconductor)

TAGS

TSF2N60MZ N-Channel MOSFET Truesemi

Image Gallery

TSF2N60MZ Datasheet Preview Page 2 TSF2N60MZ Datasheet Preview Page 3

TSF2N60MZ Distributor