TSF2N60MZ - N-Channel MOSFET
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.
These devices a
TSF2N60MZ Features
* 2.0A, 600V, RDS(on) = 5.00Ω @VGS = 10 V
* Low gate charge ( typical 9nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* ESD improved capability
* Improved dv/dt capability GDS TO-220 GD S TO-220F Absolute Maximum Ratings TC
