TSF10H120C
Taiwan Semiconductor
238.30kb
Trench schottky rectifier.
TAGS
📁 Related Datasheet
TSF10H100C - Trench Schottky Rectifier
(Taiwan Semiconductor)
creat by ART
TSF10H100C
Taiwan Semiconductor
FEATURES
Dual High-Voltage Trench MOS Barrier Schottky Rectifier
- Patented Trench MOS Barrier Schott.
TSF10H150C - Trench Schottky Rectifier
(Taiwan Semiconductor)
TSF10H100C thru TSF10H200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology - Excellent high temperature.
TSF10H200C - Trench Schottky Rectifier
(Taiwan Semiconductor)
TSF10H100C thru TSF10H200C
Taiwan Semiconductor
Trench Schottky Rectifier
FEATURES
- Patented Trench Schottky technology - Excellent high temperature.
TSF10N60C - 600V Insulated N-Channel Type Power MOSFET
(Thinki Semiconductor)
TSF10N60C
®
TSF10N60C
Pb Free Plating Product
Pb
10.3A,600V Insulated N-Channel Type Power MOSFET
Features
■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate.
TSF10N60M - 600V N-Channel MOSFET
(Truesemi)
TSP10N60M / TSF10N60M
600V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.
TSF10N60S - N-Channel MOSFET
(Truesemi)
TSP10N60S / TSF10N60S/TSB10N60S 600V N-Channel MOSFET
September, 2013
SJ-FET
TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET
Description
SJ-FET.
TSF10N65M - N-Channel MOSFET
(Truesemi)
TSP10N65M/TSF10N65M
TSP10N65M/TSF10N65M
650V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar str.
TSF10N80M - N-Channel MOSFET
(Truesemi)
TSF10N80M
TSF10N80M
800V N-Channel MOSFET
General Description
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology..
TSF10U60C - Trench Schottky Rectifier
(Taiwan Semiconductor)
TSF10U60C
Taiwan Semiconductor
FEATURES
- Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forwar.
TSF110D00A-S4 - Saw Filters
(Token)
Product Introduction
Token Saw Filters (TSF) Make New Waves in The Wireless World.
With the growth of wireless munications, surface acoustic wave.