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TSF10N60M - 600V N-Channel MOSFET

TSF10N60M Description

TSP10N60M / TSF10N60M 600V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSF10N60M Features

* 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V
* Low gate charge ( typical 48nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability {D GDS TO-220 GD S TO-220F
* ◀▲ {G
* {S Absolute Maximum Ratings T

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Datasheet Details

Part number
TSF10N60M
Manufacturer
Truesemi
File Size
263.29 KB
Datasheet
TSF10N60M-Truesemi.pdf
Description
600V N-Channel MOSFET

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Truesemi TSF10N60M-like datasheet