TSF10N60M Datasheet - Truesemi

600V N-Channel MOSFET

TSF10N60M Features

* 10.0A, 600V, RDS(on) = 0.750Ω @VGS = 10 V

* Low gate charge ( typical 48nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability {D GDS TO-220 GD S TO-220F

* ◀▲ {G

* {S Absolute Maximum Ratings T

TSF10N60M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF10N60M Datasheet (263.29 KB)

TSF10N60M Datasheet Preview — Preview of TSF10N60M PDF

Datasheet Details

Part number:

TSF10N60M

Manufacturer:

Truesemi

File Size:

263.29 KB

Description:

600v n-channel mosfet.

📁 Related Datasheet

TSF10N60C 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)

TSF10N60S N-Channel MOSFET (Truesemi)

TSF10N65M N-Channel MOSFET (Truesemi)

TSF10N80M N-Channel MOSFET (Truesemi)

TSF10H100C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H120C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H150C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H200C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10U60C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF110D00A-S4 Saw Filters (Token)

TAGS

TSF10N60M 600V N-Channel MOSFET Truesemi

Image Gallery

TSF10N60M Features

TSF10N60M General Description

Datasheet Details

File Size:

Description:

TSF10N60M Distributor