TSF12N60MS Datasheet (Truesemi)

TSF12N60MS, N-Channel MOSFET

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance.

This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs

TSF12N60MS Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.4Ω

* Ultra Low Gate Charge (typ. Qg = 30nC)

* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti