TSF12N60MS

N-Channel MOSFET

Truesemi

TSF12N60MS Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.4Ω

* Ultra Low Gate Charge (typ. Qg = 30nC)

* 100% avalanche tested Absolute Maximum Ratings Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, TSTG TL Parameter Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti

TSF12N60MS General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

TSF12N60MS Datasheet (913.68 KB)

TSF12N60MS Datasheet Preview — Preview of TSF12N60MS PDF

Datasheet Details

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TSF12N60MS

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Truesemi

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913.68 KB

Description:

N-channel mosfet.

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TSF12N60MS N-Channel MOSFET Truesemi

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TSF12N60MS Features

TSF12N60MS General Description

Datasheet Details

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