TSF12N65M Datasheet - Truesemi

TSF12N65M N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF12N65M Features

* 12.0A, 650V, RDS(on) = 0.750 @VGS = 10 V

* Low gate charge ( typical 52nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability D GDS TO-220 GD S TO-220F

* ◀▲ G

* S Absolute Maximum Ratings T

TSF12N65M Datasheet (367.54 KB)

TSF12N65M Datasheet Preview — Preview of TSF12N65M PDF

Datasheet Details

Part number:

TSF12N65M

Manufacturer:

Truesemi

File Size:

367.54 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF12N60M 600V N-Channel MOSFET (Truesemi)

TSF12N60MS N-Channel MOSFET (Truesemi)

TSF10H100C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H120C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H150C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H200C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10N60C 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)

TSF10N60M 600V N-Channel MOSFET (Truesemi)

TSF10N60S N-Channel MOSFET (Truesemi)

TSF10N65M N-Channel MOSFET (Truesemi)

TAGS

TSF12N65M N-Channel MOSFET Truesemi

Image Gallery

TSF12N65M Distributor