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TSF10N80M Datasheet - Truesemi

TSF10N80M - N-Channel MOSFET

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode.

These devices a

TSF10N80M Features

* 10.0A,800V,Max.RDS(on)=1.10 Ω @ VGS =10V

* Low gate charge(typical 45nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSF10N80M-Truesemi.pdf

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Datasheet Details

Part number:

TSF10N80M

Manufacturer:

Truesemi

File Size:

309.73 KB

Description:

N-channel mosfet.

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