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TSF10N80M - N-Channel MOSFET

TSF10N80M Description

TSF10N80M TSF10N80M 800V N-Channel MOSFET General .
This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSF10N80M Features

* 10.0A,800V,Max. RDS(on)=1.10 Ω @ VGS =10V
* Low gate charge(typical 45nC)
* High ruggedness
* Fast switching
* 100% avalanche tested
* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

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Datasheet Details

Part number
TSF10N80M
Manufacturer
Truesemi
File Size
309.73 KB
Datasheet
TSF10N80M-Truesemi.pdf
Description
N-Channel MOSFET

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N-Channel MOSFET Truesemi
Truesemi TSF10N80M-like datasheet