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TSF10N80M

N-Channel MOSFET

TSF10N80M Features

* 10.0A,800V,Max.RDS(on)=1.10 Ω @ VGS =10V

* Low gate charge(typical 45nC)

* High ruggedness

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability Absolute Maximum Ratings TC=25℃ unless otherwise specified Symbol VDSS VGS ID IDM EAS EA

TSF10N80M General Description

This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse in the avalanche and commutation mode. These devices a.

TSF10N80M Datasheet (309.73 KB)

Preview of TSF10N80M PDF

Datasheet Details

Part number:

TSF10N80M

Manufacturer:

Truesemi

File Size:

309.73 KB

Description:

N-channel mosfet.

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TSF10N80M N-Channel MOSFET Truesemi

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