- Excellent high temperature stability - Low forward voltage - Lower power loss/ High efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition
Trench MOS Barrier Schottky Rectifier
- Patented Trench MOS Barrier Schottky technology
ITO-220AB.
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TSF10N60C - 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)