Datasheet4U Logo Datasheet4U.com

TSF10H150C

Trench Schottky Rectifier

TSF10H150C Features

* - Patented Trench Schottky technology - Excellent high temperature stability - Low forward voltage - Low power loss/ high efficiency - High forward surge capability - Compliant to RoHS directive 2011/65/EU and in accordance to WEEE 2002/96/EC - Halogen-free according to IEC 61249-2-21 definition TYP

TSF10H150C Datasheet (238.30 KB)

Preview of TSF10H150C PDF

Datasheet Details

Part number:

TSF10H150C

Manufacturer:

Taiwan Semiconductor

File Size:

238.30 KB

Description:

Trench schottky rectifier.

📁 Related Datasheet

TSF10H100C - Trench Schottky Rectifier (Taiwan Semiconductor)
creat by ART TSF10H100C Taiwan Semiconductor FEATURES Dual High-Voltage Trench MOS Barrier Schottky Rectifier - Patented Trench MOS Barrier Schott.

TSF10H120C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H100C thru TSF10H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature.

TSF10H200C - Trench Schottky Rectifier (Taiwan Semiconductor)
TSF10H100C thru TSF10H200C Taiwan Semiconductor Trench Schottky Rectifier FEATURES - Patented Trench Schottky technology - Excellent high temperature.

TSF10N60C - 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)
TSF10N60C ® TSF10N60C Pb Free Plating Product Pb 10.3A,600V Insulated N-Channel Type Power MOSFET Features ■ RDS(on) (Max 0.75 Ω )@VGS=10V ■ Gate.

TSF10N60M - 600V N-Channel MOSFET (Truesemi)
TSP10N60M / TSF10N60M 600V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology.

TSF10N60S - N-Channel MOSFET (Truesemi)
TSP10N60S / TSF10N60S/TSB10N60S 600V N-Channel MOSFET September, 2013 SJ-FET TSP10N60S/TSF10N60S /TSB10N60S 600V N-Channel MOSFET Description SJ-FET.

TSF10N65M - N-Channel MOSFET (Truesemi)
TSP10N65M/TSF10N65M TSP10N65M/TSF10N65M 650V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar str.

TSF10N80M - N-Channel MOSFET (Truesemi)
TSF10N80M TSF10N80M 800V N-Channel MOSFET General Description This Power MOSFET is produced using Truesemi‘s advanced planar stripe DMOS technology..

TAGS

TSF10H150C Trench Schottky Rectifier Taiwan Semiconductor

Image Gallery

TSF10H150C Datasheet Preview Page 2 TSF10H150C Datasheet Preview Page 3

TSF10H150C Distributor