Datasheet4U Logo Datasheet4U.com

TSF11N60S

N-Channel MOSFET

TSF11N60S Features

* 650V @TJ = 150 ℃

* Typ. RDS(on) = 0.38Ω

* Ultra Low Gate Charge (typ. Qg = 35nC)

* 100% avalanche tested

* Rohs Compliant D2-PAK (TO-263) Absolute Maximum Ratings Symbol Parameter VDSS ID Drain-Source Voltage Drain Current -Continuous (TC = 25℃) -Conti

TSF11N60S General Description

SJ-FET is new generation of high voltage MOSFET family that is utilizing an advanced charge balance mechanism for outstanding low on-resistance and lower gate charge performance. This advanced technology has been tailored to minimize conduction loss, provide superior switching performance, and withs.

TSF11N60S Datasheet (922.39 KB)

Preview of TSF11N60S PDF

Datasheet Details

Part number:

TSF11N60S

Manufacturer:

Truesemi

File Size:

922.39 KB

Description:

N-channel mosfet.

📁 Related Datasheet

TSF110D00A-S4 Saw Filters (Token)

TSF110D00B-S1 Saw Filters (Token)

TSF110D00C-S1 Saw Filters (Token)

TSF110D592A-S4 Saw Filters (Token)

TSF110D592B-S1 Saw Filters (Token)

TSF10H100C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H120C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H150C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10H200C Trench Schottky Rectifier (Taiwan Semiconductor)

TSF10N60C 600V Insulated N-Channel Type Power MOSFET (Thinki Semiconductor)

TAGS

TSF11N60S N-Channel MOSFET Truesemi

Image Gallery

TSF11N60S Datasheet Preview Page 2 TSF11N60S Datasheet Preview Page 3

TSF11N60S Distributor