FQP65N06 Datasheet (Thinki Semiconductor)

FQP65N06, N-Channel Power MOSFET

This N-channel enhancement mode field-effect power transistor using THINKI Semiconductor advanced planar stripe, DMOS technology intended for off-line switch mode power supply.

Also, especially designed to minimize rds(on) and high rugged avalanche characteristics.

The TO-220M pkg is well suited for

FQP65N06 Features

* 65A, 60V, RDS(on) = 0.016Ω @VGS = 10 V

* Low gate charge ( typical 48 nC)

* Low Crss ( typical 100 pF)

* Fast switching

* 100% avalanche tested

* Improved dv/dt capability

* 175°C maximum junction temperature rating 1. Gate { { 2. Drain