FQP6N40C Datasheet (Fairchild Semiconductor)

FQP6N40C, 400V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology.

This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy

FQP6N40C Features

* 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A

* Low Gate Charge (Typ. 16 nC)

* Low Crss (Typ. 15 pF)

* 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, T