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FQP6N40C Datasheet - Fairchild Semiconductor

FQP6N40C 400V N-Channel MOSFET

This N-Channel enhancement mode power MOSFET is produced using Fairchild Semiconductor’s proprietary planar stripe and DMOS technology. This advanced MOSFET technology has been especially tailored to reduce on-state resistance, and to provide superior switching performance and high avalanche energy .

FQP6N40C Features

* 6.0 A, 400 V, RDS(on) = 1.0 Ω (Max.) @ VGS = 10 V, ID = 3 A

* Low Gate Charge (Typ. 16 nC)

* Low Crss (Typ. 15 pF)

* 100% Avalanche Tested D GDS TO-220 Absolute Maximum Ratings TC = 25°C unless otherwise noted. Symbol VDSS ID IDM VGSS EAS IAR EAR dv/dt PD TJ, T

FQP6N40C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQP6N40C

Manufacturer:

Fairchild Semiconductor

File Size:

1.17 MB

Description:

400v n-channel mosfet.

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FQP6N40C FQP6N40C 400V N-Channel MOSFET Fairchild Semiconductor

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