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FQP6N60

600V N-Channel MOSFET

FQP6N60 Features

* 6.2A, 600V, RDS(on) = 1.5Ω @VGS = 10 V Low gate charge ( typical 20 nC) Low Crss ( typical 10 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " TO-220 FQP Series ! S Absolute Maximum Ratings S

FQP6N60 General Description

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i.

FQP6N60 Datasheet (536.77 KB)

Preview of FQP6N60 PDF

Datasheet Details

Part number:

FQP6N60

Manufacturer:

Fairchild Semiconductor

File Size:

536.77 KB

Description:

600v n-channel mosfet.

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FQP6N60 600V N-Channel MOSFET Fairchild Semiconductor

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