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FQP6N60C Datasheet - Fairchild Semiconductor

FQP6N60C 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology. This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand.

FQP6N60C Features

* 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! G DS TO-220 FQP Series GD S TO-220F FQPF Ser

FQP6N60C_FairchildSemiconductor.pdf

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Datasheet Details

Part number:

FQP6N60C

Manufacturer:

Fairchild Semiconductor

File Size:

948.96 KB

Description:

600v n-channel mosfet.

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FQP6N60C FQP6N60C 600V N-Channel MOSFET Fairchild Semiconductor

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