FQP6N60C Datasheet (Fairchild Semiconductor)

FQP6N60C, 600V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, www.DataSheet4U.com planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand

FQP6N60C Features

* 5.5A, 600V, RDS(on) = 2.0Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 7 pF) Fast switching 100% avalanche tested Improved dv/dt capability D !

* ◀ ▲

* G! G DS TO-220 FQP Series GD S TO-220F FQPF Ser