FQP6N45 Datasheet (Fairchild Semiconductor)

FQP6N45, 450V N-Channel MOSFET

These N-Channel enhancement mode power field effect transistors are produced using Fairchild’s proprietary, planar stripe, DMOS technology.

This advanced technology has been especially tailored to minimize on-state resistance, provide superior switching performance, and withstand high energy pulse i

FQP6N45 Features

* 6.2A, 450V, RDS(on) = 1.1Ω @VGS = 10 V Low gate charge ( typical 16 nC) Low Crss ( typical 11 pF) Fast switching 100% avalanche tested Improved dv/dt capability D ! " G G! DS ! " " " ! S Absolute Maximum Ratings Symbol VDSS ID IDM VG