HBR20200 Datasheet - Tianjin Micro Electronic

HBR20200, SCHOTTKY BARRIER DIODE

HBR20200 MAIN CHARACTERISTICS SCHOTTKY BARRIER DIODE IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） APPLICATIONS High frequ.

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HBR20200-TianjinMicroElectronic.pdf

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Datasheet Details

Part number:

HBR20200

Manufacturer:

Tianjin Micro Electronic

File Size:

484.62 KB

Description:

SCHOTTKY BARRIER DIODE

Features

* Common cathode structure ， Low power loss, high efficiency High Operating ，（RoHS） Junction Temperature Guard ring for overvoltage protection， High reliability RoHS product Tianjin Micro Electronic Material Technology Co,. Ltd. TEL： (86) 22-2532 3492 ： 16-2 ADD：No.16-2 Xiangan Road TEDA

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HBR20200 SCHOTTKY BARRIER DIODE Tianjin Micro Electronic

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