* Common cathode structure ， Low power loss, high efficiency High Operating ， （RoHS） Junction Temperature Guard ring for overvoltage protection， High reliability RoHS product Tianjin Micro Electronic Material Technology Co,.Ltd. TEL： (86) 22-2532 3492 ： 16-2 ADD：No.16-2 Xiangan Road TEDA
HBR20200 Datasheet (484.62 KB)
HBR20200
Tianjin Micro Electronic
484.62 KB
Schottky barrier diode.
HBR20200 MAIN CHARACTERISTICS SCHOTTKY BARRIER DIODE IF(AV) VRRM Tj VF(max) 20（2×10）A 200 V 175 ℃ 0.75V （@Tj=125℃） APPLICATIONS High frequ.
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