HBR20200FR
Jilin Sino
409.25kb
Schottky barrier diode. of Changes 2010-03-08 200911F 201003G Added TO-220HF. (Rev.):201003G 7/7
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HBR20200F - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR20200 - SCHOTTKY BARRIER DIODE
(Tianjin Micro Electronic)
HBR20200
MAIN CHARACTERISTICS
SCHOTTKY BARRIER DIODE
IF(AV) VRRM Tj VF(max)
20(2×10)A 200 V
175 ℃ 0.75V (@Tj=125℃)
APPLICATIONS
High frequ.
HBR20200 - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR20200C - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR20200CR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR20200CT - Schottky Barrier Rectifier
(Inchange Semiconductor)
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss,high Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
HBR20200HF - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR20200HFR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R SCHOTTKY BARRIER DIODE
HBR20200
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A
200 V 175 ℃ 0.75V (@Tj=125℃)
z z
APPLICAT.
HBR20100 - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100BF - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.