HBR20S45
JILIN SINO
292.36kb
Schottky barrier diode. of Changes 2015-3-10 201412A 201503B Revised IR Spec. (Rev):201503B 6/6
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HBR20S45S - SCHOTTKY BARRIER DIODE
(JILIN SINO)
R SCHOTTKY BARRIER DIODE
HBR20S45S
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20A 45 V 175 ℃ 0.6V (20A Tj=125℃)
l l
APPLICATIONS.
HBR20100 - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100BF - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100BFR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100C - SCHOTTKY BARRIER DIODE
(JILIN SINO)
R SCHOTTKY BARRIER DIODE
HBR20100C
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.72V (@Tj=125℃)
l l
APPLICA.
HBR20100CT - Schottky Barrier Rectifier
(Inchange Semiconductor)
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.
HBR20100D - SCHOTTKY BARRIER DIODE
(JILIN SINO)
R SCHOTTKY BARRIER DIODE
HBR20100D
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.72V (@Tj=125℃)
APPLICA.
HBR20100F - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100FR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100HF - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.