HBR20S45S - SCHOTTKY BARRIER DIODE
(JILIN SINO)
R SCHOTTKY BARRIER DIODE
HBR20S45S
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20A 45 V 175 ℃ 0.6V (20A Tj=125℃)
l l
APPLICATIONS.
HBR20100 - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100BF - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100BFR - SCHOTTKY BARRIER DIODE
(Jilin Sino)
R
SCHOTTKY BARRIER DIODE
HBR20100
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.7V (@Tj=125℃)
APPLIC.
HBR20100C - SCHOTTKY BARRIER DIODE
(JILIN SINO)
R SCHOTTKY BARRIER DIODE
HBR20100C
MAIN CHARACTERISTICS
Package
IF(AV) VRRM Tj VF(max)
20(2×10)A 100 V 175 ℃ 0.72V (@Tj=125℃)
l l
APPLICA.
HBR20100CT - Schottky Barrier Rectifier
(Inchange Semiconductor)
Schottky Barrier Rectifier
FEATURES ·Common Cathode Structure ·Low Power Loss/High Efficiency ·High Operating Junction Temperature ·Guarding for Overv.