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HBR20200 SCHOTTKY BARRIER DIODE

HBR20200 Description

HBR20200 MAIN CHARACTERISTICS SCHOTTKY BARRIER DIODE IF(AV) VRRM Tj VF(max) 20(2×10)A 200 V 175 ℃ 0.75V (@Tj=125℃) APPLICATIONS High frequ.

HBR20200 Features

* Common cathode structure , Low power loss, high efficiency High Operating , (RoHS) Junction Temperature Guard ring for overvoltage protection, High reliability RoHS product Tianjin Micro Electronic Material Technology Co,. Ltd. TEL: (86) 22-2532 3492 : 16-2 ADD:No.16-2 Xiangan Road TEDA

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Tianjin Micro Electronic HBR20200-like datasheet