XP161A11A1PR - Power MOS FET
The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
In order to counter static, a gate protect diode is built-in.
The small SOT-89 pac
XP161A11A1PR Features
* Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V) Rds(on)=0.105Ω(Vgs=4.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 4.5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S FUNCTION Gate Drain Source S
