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XP161A11A1PR Power MOS FET

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Description

x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.105Ω MAX x Gate Protect Diode Built-in x Ultra High-Speed Switching x SOT-89 P.
The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics.

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Features

* Low on-state resistance: Rds(on)=0.065Ω(Vgs=10V) Rds(on)=0.105Ω(Vgs=4.5V) Ultra high-speed switching Gate Protect Diode Built-in Operational Voltage: 4.5V High density mounting: SOT-89 u s Pin Configuration s Pin Assignment PIN NUMBER 1 2 3 1 G 2 D 3 S PIN NAME G D S FUNCTION Gate Drain Source S

XP161A11A1PR Distributors

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