XP161A11A1PR
Torex Semiconductor
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Power mos fet. The XP161A11A1PR is a N-Channel Power MOS FET with low on-state resistance and ultra high-speed switching characteristics. Because hi
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XP161A11A1PR-G - Power MOSFET
(Torex)
XP161A11A1PR-G
Power MOSFET
ETR1122_003
■GENERAL DESCRIPTION
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra .
XP161A1265PR - Power MOS FET
(Torex Semiconductor)
x N-Channel Power MOS FET x DMOS Structure x Low On-State Resistance: 0.055Ω MAX x Gate Protect Diode Built-in x Ultra High-Speed Switching x SOT-89 P.
XP161A1265PR-G - Power MOSFET
(Torex Semiconductor)
XP161A1265PR-G
Power MOSFET
ETR11023-004
■GENERAL DESCRIPTION
The XP161A1265PR is an N-channel Power MOSFET with low on-state resistance and ultra h.
XP161A1355PR - POWER MOSFET
(Torex Semiconductor)
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance : 0.05Ω (max) NUltra High-Speed Switching NSOT-89 Package NGate Protect Diode Built-.
XP161A1355PR-G - Power MOSFET
(Torex)
XP161A1355PR-G
Power MOSFET
ETR11024-004
■GENERAL DESCRIPTION
The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra h.
XP161A0390PR - Power MOS FET
(Torex Semiconductor)
NN-Channel Power MOS FET NDMOS Structure NLow On-State Resistance: 0.09Ω (max) NUltra High-Speed Switching NSOT-89 Package
GNotebook PCs GCellular and.
XP1601 - Silicon PNP(PNP) epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP1601
Silicon PNP epitaxial planer transistor (Tr1) Silicon NPN epitaxial planer transistor (Tr2)
Unit: mm
2.1±0.1 0.425 1.25±.
XP162A11C0PR - Power MOS FET
(Torex Semiconductor)
P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.28 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package
.
XP162A11C0PR-G - Power MOSFET
(Torex Semiconductor)
XP162A11C0PR-G
Power MOSFET
ETR11025-004
■GENERAL DESCRIPTION
The XP162A11C0PR is a P-channel Power MOSFET with low on-state resistance and ultra hi.
XP162A12A6PR - Power MOSFET
(Torex Semiconductor)
P-Channel Power MOS FET DMOS Structure Low On-State Resistance : 0.17 Ω (max) Ultra High-Speed Switching Gate Protect Diode Built-in SOT - 89 Package
.