XP161A1355PR-G - Power MOSFET
The XP161A1355PR is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 packag
XP161A1355PR-G Features
* Low On-State Resistance : Rds(on)=0.05Ω@Vgs=4.5V : Rds(on)=0.07Ω@Vgs=2.5V : Rds(on)=0.15Ω@Vgs=1.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 1.5V N-Channel Power MOSFET DMOS Structure Package : SOT-89 11 3x 1
* PIN CONFIGURATION/ MARKING G：Gate S：Source
