XP161A11A1PR-G - Power MOSFET
The XP161A11A1PR-G is an N-channel Power MOSFET with low on-state resistance and ultra high-speed switching characteristics.
Because high-speed switching is possible, the IC can be efficiently set thereby saving energy.
A gate protect diode is built-in to prevent static damage.
The small SOT-89 pack
XP161A11A1PR-G Features
* Low On-State Resistance : Rds(on)=0.065Ω@ Vgs=10V : Rds(on)=0.105Ω@ Vgs=4.5V Ultra High-Speed Switching Gate Protect Diode Built-in Driving Voltage : 4.5V N-Channel Power MOSFET DMOS Structure Small Package : SOT-89 Environmentally Friendly : EU RoHS Compliant, Pb Free 11 1x
* PIN CO
