XP222P0801TR-G
Torex Semiconductor
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P-channel mosfet.
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XP222P08013R-G - P-channel MOSFET
(Torex Semiconductor)
XP222P08013R-G
P-channel MOSFET -20V, -0.8A
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)=0.56Ω@VGS =-4.5V : -1..
XP222N03013R-G - N-channel MOSFET
(Torex Semiconductor)
XP222N03013R-G
N-channel MOSFET 20V, 0.3A
ETR11076-001
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)=1.3Ω@VGS =4.
XP222N03015R-G - N-channel MOSFET
(Torex Semiconductor)
XP222N03015R-G
N-channel MOSFET 20V, 0.3A
ETR11079-001
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)=1.3Ω@VGS =4.
XP222N03017R-G - N-channel MOSFET
(Torex Semiconductor)
XP222N03017R-G
N-channel MOSFET 20V, 0.3A
ETR11080-001
■FEATURES
On-State Resistance
: RDS(on)=1.3Ω@VGS =4.5V
Driving voltage
: 1.8V
Environmen.
XP222N0301TR-G - N-channel MOSFET
(Torex)
XP222N0301TR-G
N-channel MOSFET 20V, 0.3A
ETR11070-001
■FEATURES
On-State Resistance Driving voltage Environmentally Friendly
: RDS(on)=1.3Ω@VGS =4.
XP2206 - A tube
(Photonis)
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photomultiplier tubes product specification
XP2206
A tube for hot environment, 10-stage, 51mm (2 ) tube
Applications :
For scin.
XP2210 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP2210
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
+0.05
For switching/.
XP2211 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP2211
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
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For switching/.
XP2212 - photomultiplier tubes
(PHOTONIS)
photomultiplier tubes product specification
XP2212
A standard, 12-stage, 51mm (2 ) tube
Applications : Description :
High and medium energy physic.
XP2215 - Silicon NPN epitaxial planer transistor
(Panasonic Semiconductor)
Composite Transistors
XP2215
Silicon NPN epitaxial planer transistor
Unit: mm
2.1±0.1 0.425 1.25±0.1 0.425
0.2±0.05 0.12 – 0.02
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For switching/.
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