1SV281
Toshiba ↗ Semiconductor
139.13 KB
Variable caacitance diode.
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV281
1SV281
VCO for V/UHF Band Radio
* High capacitance ratio: C1 V/C4 V.
📁 Related Datasheet
1SV280 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV280
1SV280
VCO for UHF Band Radio
• High capacitance ratio: C2V / C10V = 2.4 (t.
1SV282 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV282
1SV282
CATV Tuning
• High capacitance ratio: C2 V/C25 V = 12.5 (typ.) • Low.
1SV283 - VARIABLE CAPCCITANCE DIODE
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV283
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 11.5 (typ.) · Low series r.
1SV284 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV284
VCO for V/UHF Band Radio
· High capacitance ratio: C1 V/C4 V = 2.0 (typ.) · L.
1SV285 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV285
1SV285
VCO for UHF Band Radio
• High capacitance ratio: C1 V/C4 V = 2.3 (ty.
1SV286 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV286
CATV Converter 1’st OSC Tuning
· High capacitance ratio: C2 V/C20 V = 8.9 (ty.
1SV287 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV287
UHF SHF Tuning
· High capacitance ratio: C2 V/C25 V = 7.6 (typ.) · Low series.
1SV288 - Variable Capacitance Diode
(Toshiba Semiconductor)
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type
1SV288
CATV Tuning
· High capacitance ratio: C2 V/C25 V = 16 (typ.) · Low series res.
