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1SV281 Datasheet - Toshiba Semiconductor

1SV281 VARIABLE CAACITANCE DIODE

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV281 1SV281 VCO for V/UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.0 (typ.) Low series resistance: rs = 0.28 Ω (typ.) Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g. the app.

1SV281_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV281

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

139.13 KB

Description:

Variable caacitance diode.

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1SV281 1SV281 VARIABLE CAACITANCE DIODE Toshiba Semiconductor