1SV285 - Variable Capacitance Diode
TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV285 1SV285 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.3 (typ.) Low series resistance: rs = 0.42 Ω (typ.) Useful for small size tuner.
Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g.
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