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1SV285 Datasheet - Toshiba Semiconductor

1SV285 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV285 1SV285 VCO for UHF Band Radio High capacitance ratio: C1 V/C4 V = 2.3 (typ.) Low series resistance: rs = 0.42 Ω (typ.) Useful for small size tuner. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g. the appli.

1SV285_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

1SV285

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

146.57 KB

Description:

Variable capacitance diode.

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1SV285 1SV285 Variable Capacitance Diode Toshiba Semiconductor