1SV304 Datasheet - Toshiba Semiconductor

1SV304 Variable Capacitance Diode

TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 1SV304 VCO for VHF Band Radio Small package High capacitance ratio: C1 V/C4 V = 3.0 (typ.) Low series resistance: rs = 0.27 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg 55~125 °C Note: Using continuously under heavy loads (e.g. the application of high .

1SV304 Datasheet (131.64 KB)