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1SV304 - Variable Capacitance Diode

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Part number 1SV304
Manufacturer Toshiba Semiconductor
File Size 131.64 KB
Description Variable Capacitance Diode
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TOSHIBA Variable Capacitance Diode Silicon Epitaxial Planar Type 1SV304 1SV304 VCO for VHF Band Radio • Small package • High capacitance ratio: C1 V/C4 V = 3.0 (typ.) • Low series resistance: rs = 0.27 Ω (typ.) Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Reverse voltage Junction temperature Storage temperature range VR 10 V Tj 125 °C Tstg −55~125 °C Note: Using continuously under heavy loads (e.g. the application of high temperature/current/voltage and the significant change in temperature, etc.) may cause this product to decrease in the reliability significantly even if the operating conditions (i.e. operating temperature/current/voltage, etc.) are within the absolute maximum ratings.
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