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2SA1357 Datasheet - Toshiba Semiconductor

2SA1357 Silicon PNP Epitaxial Type Transistor

www.DataSheet.co.kr 2SA1357 TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA1357 Strobe Flash Applications Audio Power Amplifier Applications Unit: mm hFE(1) = 100 to 320 (VCE = 2 V, IC = 0.5 A) hFE(2) = 70 (min) (VCE = 2 V, IC = 4 A) Low saturation voltage: VCE (sat) = 1.0 V (max) (IC = 4 A, IB = 0.1 A) High power dissipation: PC = 10 W (Tc = 25°C), PC = 1.5 W (Ta = 25°C) A.

2SA1357_ToshibaSemiconductor.pdf

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Datasheet Details

Part number:

2SA1357

Manufacturer:

Toshiba ↗ Semiconductor

File Size:

196.62 KB

Description:

Silicon pnp epitaxial type transistor.

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2SA1357 2SA1357 Silicon PNP Epitaxial Type Transistor Toshiba Semiconductor

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