* High breakdown voltage : VCEO≤200V.
* Small reverse transfer capacitance and excellent high frequency characteristics : Cre=1.2pF (NPN), 1.7pF (PNP).
* Adoption of FBET process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1352 2.4 4.8 Specifications Absolute Maximum
2SA1352
Sanyo Semicon Device
78.90 KB
Pnp/npn epitaxial planar silicon transistors.
www.DataSheet4U.com Ordering number:ENN1411C PNP/NPN Epitaxial Planar Silicon Transistors 2SA1352/2SC3416 Ultrahigh-Definition CRT Display Video Out.
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