* High breakdown voltage : VCEO≤300V.
* Excellent high frequency characteristics : Cre=1.8pF(typ).
* Adoption of MBIT process. 3.0 1.5 7.0 1.6 0.8 0.8 0.6 3.0 11.0 15.5 0.5 ( ) : 2SA1353 2.4 4.8 Specifications Absolute Maximum Ratings at Ta = 25˚C Parameter Collector-to-Base Vol
2SA1353
Sanyo Semicon Device
64.61 KB
Pnp/npn epitaxial planar silicon transistors.
Ordering number:ENN1390D PNP/NPN Epitaxial Planar Silicon Transistors 2SA1353/2SC3417 Ultrahigh-Definition CRT Display Video Output Applications App.
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