2SA965 Datasheet - Toshiba Semiconductor

2SA965 Silicon PNP Transistor

TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT Process) 2SA965 Power Amplifier Applications Driver-Stage Amplifier Applications 2SA965 Unit: mm Complementary to 2SC2235. Absolute Maximum Ratings (Ta = 25°C) Characteristics Symbol Rating Unit Collector-base voltage VCBO 120 V Collector-emitter voltage VCEO 120 V Emitter-base voltage VEBO 5 V Collector current IC 800 mA Base current IB -80 mA Collector power dissipation .

2SA965_ToshibaSemiconductor.pdf