2SA950 - TRANSISTOR
TOSHIBA Transistor Silicon PNP Epitaxial Type (PCT process) 2SA950 2SA950 Audio Power Amplifier Applications Unit: mm High hFE: hFE = 100~320 1 W output applications Complementary to 2SC2120 Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC IB PC Tj Tstg Rating -35 -30 -5 -800 -
