Datasheet Details
Part number:
2SC2669
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
291.14 KB
Description:
Transistor.
2SC2669_ToshibaSemiconductor.pdf
Datasheet Details
Part number:
2SC2669
Manufacturer:
Toshiba ↗ Semiconductor
File Size:
291.14 KB
Description:
Transistor.
2SC2669, TRANSISTOR
2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm High power gain: Gpe = 30dB (typ.) (f = 10.7 MHz) Recommended for FM IF, OSC stage and AM CONV, IF stage.
Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipation Junction temperature Storage temperature range Symbol VCBO VCEO VEBO IC I
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