2SC2669 TRANSISTOR

Toshiba Semiconductor

Description

2SC2669 TOSHIBA Transistor Silicon NPN Epitaxial Planar Type (PCT process) 2SC2669 High Frequency Amplifier Applications Unit: mm * High power .

📥 Download Datasheet

2SC2669 Datasheet Preview — Preview of 2SC2669 PDF

Datasheet Specifications

Part number: 2SC2669
Manufacturer: Toshiba ↗ Semiconductor
File Size: 291.14 KB
Datasheet: 2SC2669_ToshibaSemiconductor.pdf
Description: TRANSISTOR

Applications

* Unit: mm
* High power gain: Gpe = 30dB (typ. ) (f = 10.7 MHz)
* Recommended for FM IF, OSC stage and AM CONV, IF stage. Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Base current Collector power dissipat

2SC2669 Distributors

📁 Related Datasheet

2SC2660 2SC2660A 2SC2665 2SC2668-O 2SC2668-R 2SC2668-Y

📌 All Tags

2SC2669 TRANSISTOR Toshiba Semiconductor

Toshiba Semiconductor 2SC2669-like datasheet