2SC2665 Silicon NPN Power Transistor

Inchange Semiconductor

Description

isc Silicon NPN Power Transistor .
Collector-Emitter Breakdown Voltage- : V(BR)CEO= 80V(Min). Wide Area of Safe Operation. Minimum Lot-to-Lot variations for robust device p.

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Datasheet Specifications

Part number: 2SC2665
Manufacturer: Inchange Semiconductor
File Size: 197.23 KB
Datasheet: 2SC2665-InchangeSemiconductor.pdf
Description: Silicon NPN Power Transistor

Applications

* Designed for audio frequency power amplifier applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 100 V VCEO Collector-Emitter Voltage 80 V VEBO Emitter-Base Voltage 6 V IC Collector Current-Continuous PC Collector Power Dis

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2SC2665 Silicon NPN Power Transistor Inchange Semiconductor

Inchange Semiconductor 2SC2665-like datasheet