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2SC2624 - Power Transistor

2SC2624 Description

isc Silicon NPN Power Transistor 2SC2624 .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 400V(Min). High Switching Speed. High Reliability. Minimum Lot-to-Lot variation.

2SC2624 Applications

* Switching regulators
* Ultrasonic generators
* High frequency inverters
* General purpose power amplifiers ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 450 V VCEO Collector-Emitter Voltage 400 V VCEO(SUS) Collector-Emitter Volta

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Power Transistor Inchange Semiconductor
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