Datasheet Details
| Part number | 2SC2608 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.52 KB |
| Description | NPN Transistor |
| Datasheet |
 2SC2608 Datasheet
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| Part number | 2SC2608 |
|---|---|
| Manufacturer | Inchange Semiconductor |
| File Size | 174.52 KB |
| Description | NPN Transistor |
| Datasheet |
2SC2608 Datasheet
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·With TO-3 Package ·Complementary to 2SA1117 ·100% avalanche tested ·Minimum Lot-to-Lot variations for robust device performance and reliable operation APPLICATIONS ·For power amplifier applications ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 200 V VCEO Collector-Emitter Voltage 200 V VEBO IC PC TJ Tstg Emitter-Base Voltage Collector Current-Continuous Collector Power Dissipation @ TC=25℃ Junction Temperature Storage Temperature Range 6 V 17 A 200 W 150 ℃ -55~150 ℃ THERMAL CHARACTERISTICS SYMBOL PARAMETER Rth j-c Thermal Resistance, Junction to Case MAX UNIT 0.625 ℃/W isc website：www.iscsemi.com 1 isc & iscsemi is registered trademark isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2608 ELECTRICAL CHARACTERISTICS TC=25℃ unless otherwise specified SYMBOL PARAMETER CONDITIONS VCE(sat) Collector-Emitter Saturation Voltage IC= 8A;
IB= 0.8A ICBO Collector Cutoff Current VCB=200V;IB= 0 IEBO Emitter Cutoff Current VEB= 6V;
IC=0 hFE DC Current Gain IC= 8A ;
isc Silicon NPN Power Transistor INCHANGE Semiconductor 2SC2608.
| Brand Logo | Part Number | Description | Manufacturer |
|---|---|---|---|
 |
2SC2608 | SILICON POWER TRANSISTOR | SavantIC |
| Part Number | Description |
|---|---|
| 2SC2611 | NPN Transistor |
| 2SC2612 | NPN Transistor |
| 2SC2613 | NPN Transistor |
| 2SC2615 | NPN Transistor |
| 2SC2616 | NPN Transistor |
| 2SC2626 | NPN Transistor |
| 2SC2650 | Silicon NPN Power Transistor |
| 2SC2654 | NPN Transistor |
| 2SC2655 | NPN Transistor |
| 2SC2656 | NPN Transistor |