Datasheet4U Logo Datasheet4U.com

2SC2610 - Silicon NPN Triple Diffused Transistor

📥 Download Datasheet

Datasheet preview – 2SC2610

Datasheet Details

Part number 2SC2610
Manufacturer Hitachi Semiconductor
File Size 29.62 KB
Description Silicon NPN Triple Diffused Transistor
Datasheet download datasheet 2SC2610 Datasheet
Additional preview pages of the 2SC2610 datasheet.

📁 Similar Datasheet

  • 2SC2610 - Silicon NPN Triple Diffused Transistor (Renesas)
  • 2SC2611 - NPN Transistor (INCHANGE)
  • 2SC2611 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2611 - Silicon NPN transistor (BLUE ROCKET ELECTRONICS)
  • 2SC2612 - NPN Transistor (INCHANGE)
  • 2SC2612 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2613 - NPN Transistor (INCHANGE)
  • 2SC2613 - SILICON POWER TRANSISTOR (SavantIC)
  • 2SC2614 - Silicon NPN Triple Diffused Transistor (ETC)
  • 2SC2615 - NPN Transistor (INCHANGE)
Other Datasheets by Hitachi Semiconductor
  • 2SC2611 - Silicon NPN Transistor
  • 2SC2612 - Silicon NPN Transistor
  • 2SC2613 - Silicon NPN Transistor
  • 2SC2618 - Silicon NPN Transistor
  • 2SC2619 - Silicon NPN Transistor
  • 2SC2620 - Silicon NPN Transistor
  • 2SC2267 - Silicon NPN Triple Diffused Transistor
  • 2SC2278 - Silicon NPN Triple Diffused Transistor

Full PDF Text Transcription

Click to expand full text
2SC2610 Silicon NPN Triple Diffused Application • High voltage amplifier • TV Video output Outline TO-92 (1) 1. Emitter 2. Collector 3. Base 3 2 1 2SC2610 Absolute Maximum Ratings (Ta = 25°C) Item Collector to base voltage Collector to emitter voltage Emitter to base voltage Collector current Collector power dissipation Junction temperature Storage temperature Symbol VCBO VCEO VEBO IC PC Tj Tstg Ratings 300 300 5 100 800 150 –55 to +150 Unit V V V mA mW °C °C Electrical Characteristics (Ta = 25°C) Item Collector to base breakdown voltage Symbol V(BR)CBO Min 300 300 5 — 30 — 50 — Typ — — — — — — 80 — Max — — — 1.0 200 1.5 — 4.
Published: |