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2SC2616 NPN Transistor

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Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Sustaining Voltage- : VCEO(SUS)= 400V (Min). High Switching Speed. Minimum Lot-to-Lot variations for robust device.

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Datasheet Specifications

Part number
2SC2616
Manufacturer
INCHANGE
File Size
183.99 KB
Datasheet
2SC2616-INCHANGE.pdf
Description
NPN Transistor

Applications

* Designed for high voltage, high speed and high power switching applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER MAX UNIT VCBO Collector-Base Voltage 500 V VCEO Collector-Emitter Voltage 400 V VEBO Emitter-Base Voltage 7 V IC Collector Current-Continuous 10 A

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