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2SC2611 - NPN Transistor

2SC2611 Description

isc Silicon NPN Power Transistor .
High Collector-Emitter Breakdown Voltage- : V(BR)CEO= 300V(Min). Good Linearity of hFE. Low Saturation Voltage. Minimum Lot-to-Lot va.

2SC2611 Applications

* Designed for use in high frequency high voltage amplifier and TV viedo output applications. ABSOLUTE MAXIMUM RATINGS(Ta=25℃) SYMBOL PARAMETER VALUE UNIT VCBO Collector-Base Voltage 300 V VCEO Collector-Emitter Voltage 300 V VEBO Emitter-Base Voltage 5 V IC Collector Current-C

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Datasheet Details

Part number
2SC2611
Manufacturer
INCHANGE
File Size
187.18 KB
Datasheet
2SC2611-INCHANGE.pdf
Description
NPN Transistor

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NPN Transistor INCHANGE
INCHANGE 2SC2611-like datasheet